N-Channel Power MOSFET, 800V Vdss, 4.1A continuous drain current, and 3 Ohm drain-source on-resistance. Features a TO-262-3 package for through-hole mounting, with a maximum power dissipation of 125W. Operates across a wide temperature range from -55°C to 150°C, offering fast switching speeds with a 12ns turn-on delay and 30ns fall time. This silicon metal-oxide semiconductor field-effect transistor is RoHS compliant.
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Vishay IRFBE30LPBF technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
| RoHS | Compliant |
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