IRFBE30LPBF

N-Channel Power MOSFET, 800V Vdss, 4.1A continuous drain current, and 3 Ohm drain-source on-resistance. Features a TO-262-3 package for through-hole mounting, with a maximum power dissipation of 125W. Operates across a wide temperature range from -55°C to 150°C, offering fast switching speeds with a 12ns turn-on delay and 30ns fall time. This silicon metal-oxide semiconductor field-effect transistor is RoHS compliant.