N-Channel Power MOSFET, D2PAK package, featuring 900V drain-source voltage and 1.7A continuous drain current. Offers 8 Ohm drain-source resistance (Rds On Max) and 54W maximum power dissipation. Operates from -55°C to 150°C with a gate-source voltage of 20V. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 32ns. Surface mountable and RoHS compliant.
Vishay IRFBF20STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFBF20STRRPBF to view detailed technical specifications.
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