N-Channel Power MOSFET, TO-220AB package, featuring 1000V drain-source breakdown voltage and 1.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers 11 Ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 54W. Operating temperature range spans from -55°C to 150°C, with typical switching times including 9.4ns turn-on delay and 31ns fall time. Through-hole mounting and 20V gate-source voltage capability are also specified.
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Vishay IRFBG20 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 11R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 500pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 9.4ns |
| DC Rated Voltage | 1kV |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
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