N-Channel Power MOSFET, TO-220AB package, featuring 1000V drain-source breakdown voltage and 1.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers 11 Ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 54W. Operating temperature range spans from -55°C to 150°C, with typical switching times including 9.4ns turn-on delay and 31ns fall time. Through-hole mounting and 20V gate-source voltage capability are also specified.
PackageTO-220-3
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBG20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.4A
Current Rating
1.4A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
11R
Drain to Source Voltage (Vdss)
1kV
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
500pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
11R
RoHS Compliant
No
Turn-Off Delay Time
58ns
Turn-On Delay Time
9.4ns
DC Rated Voltage
1kV
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFBG20 Datasheet
Download the complete datasheet for Vishay IRFBG20 to view detailed technical specifications.
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