N-Channel Power MOSFET, TO-220AB package, featuring 1000V drain-source voltage (Vdss) and 3.1A continuous drain current (ID). Offers a low 5-ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 125W. Designed for through-hole mounting, this silicon Metal-oxide Semiconductor FET exhibits a nominal gate-source voltage (Vgs) of 4V and includes fast switching characteristics with a 12ns turn-on delay.
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Vishay IRFBG30 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 980pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 89ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 1kV |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
