N-Channel Power MOSFET, featuring a 60V drain-to-source voltage (Vdss) and 1.7A continuous drain current (ID). This silicon Metal-oxide Semiconductor FET offers a low drain-to-source resistance (Rds On) of 200mΩ. Designed for through-hole mounting in a DIP package, it operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 1.3W. Key switching characteristics include a turn-on delay time of 10ns and a fall time of 50ns.
PackageDIP
Current Rating1.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD014 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.7A
Current Rating
1.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
310pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Width
6.29mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFD014 Datasheet
Download the complete datasheet for Vishay IRFD014 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.