N-Channel Power MOSFET, featuring a 60V drain-source breakdown voltage and a continuous drain current of 1.7A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 200mΩ. Designed for through-hole mounting in a DIP package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 1.3W. Key switching characteristics include a 10ns turn-on delay and a 50ns fall time.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD014PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD014PBF Datasheet
Download the complete datasheet for Vishay IRFD014PBF to view detailed technical specifications.
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