Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, TO-250, 3 PIN
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Vishay IRFD113 technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 200pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 800mR |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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