N-channel power MOSFET for general-purpose applications. Features 100V drain-source breakdown voltage and 1.3A continuous drain current. Offers a maximum drain-source on-resistance of 270mR. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a through-hole DIP format.
PackageDIP
Current Rating1.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD120PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.3A
Current Rating
1.3A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
270mR
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
18ns
Turn-On Delay Time
6.8ns
DC Rated Voltage
100V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD120PBF Datasheet
Download the complete datasheet for Vishay IRFD120PBF to view detailed technical specifications.
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