N-channel power MOSFET with 100V drain-source voltage (Vdss) and 600mA continuous drain current (ID). Features low 270mΩ drain-source on-resistance (Rds On Max) and 1.5Ω drain to source resistance. Operates with a 20V gate-source voltage (Vgs) and a 2V threshold voltage. This through-hole component offers fast switching with 8.2ns turn-on delay and 14ns turn-off delay, and a 17ns fall time. Packaged in a 4-pin DIP for through-hole mounting, it supports a maximum power dissipation of 1.3W and operates from -55°C to 175°C. RoHS compliant.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD123PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
600mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
270mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
360pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD123PBF Datasheet
Download the complete datasheet for Vishay IRFD123PBF to view detailed technical specifications.
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