N-channel JFET transistor for general-purpose small signal applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 600mA. Offers a low drain-source on-resistance of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Packaged in a through-hole DIP with a 140pF input capacitance. RoHS compliant.
PackageDIP
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD210PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
600mA
Current Rating
600mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
1.5R
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD210PBF Datasheet
Download the complete datasheet for Vishay IRFD210PBF to view detailed technical specifications.
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