IRFD9120

P-channel MOSFET transistor in a DIP package, featuring a continuous drain current of 1A and a drain-to-source voltage of -100V. Offers a maximum power dissipation of 1.3W with a drain-to-source resistance of 600mR at a nominal gate-to-source voltage of -4V. Operates across a temperature range of -55°C to 175°C, with turn-on delay time of 9.6ns and fall time of 29ns. Through-hole mountable with a width of 6.29mm, length of 5mm, and height of 3.37mm.