N-Channel Power MOSFET with 200V Drain-Source Breakdown Voltage and 9.8A Continuous Drain Current. Features 0.18ohm Drain-Source Resistance (Rds On Max) and 40W Max Power Dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220-3 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 36ns.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.8A |
| Current Rating | 9.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 180mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Not Compliant |
