Vishay
IRFI734GPBF
Power Field-Effect Transistor, 3.4A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI734GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.4A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
450V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
680pF
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.2R
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
5.9ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI734GPBF Datasheet
Download the complete datasheet for Vishay IRFI734GPBF to view detailed technical specifications.
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