Vishay
IRFI734GPBF
Power Field-Effect Transistor, 3.4A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI734GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 680pF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 5.9ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI734GPBF Datasheet
Download the complete datasheet for Vishay IRFI734GPBF to view detailed technical specifications.
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