N-Channel Power MOSFET, 500V Drain-Source Voltage, 3.1A Continuous Drain Current, and 1.5 Ohm Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 35W. Key electrical characteristics include a 4V threshold voltage, 610pF input capacitance, and switching times of 8.2ns turn-on delay and 16ns fall time. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
Vishay IRFI830GPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 610pF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
