N-Channel Power MOSFET, 500V Drain-Source Voltage, 4.5A Continuous Drain Current, and 0.85 Ohm Drain-Source Resistance. Features include a TO-220-3 package for through-hole mounting, 1.1nF input capacitance, and 12ns turn-on delay. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 40W. This silicon Metal-oxide Semiconductor FET offers a 1-element configuration.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI840GLC technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
850mR
RoHS Compliant
No
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFI840GLC Datasheet
Download the complete datasheet for Vishay IRFI840GLC to view detailed technical specifications.
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