N-Channel Power MOSFET, 500V Drain-Source Voltage, 4.5A Continuous Drain Current, and 0.85 Ohm Drain-Source Resistance. Features include a TO-220-3 package for through-hole mounting, 1.1nF input capacitance, and 12ns turn-on delay. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 40W. This silicon Metal-oxide Semiconductor FET offers a 1-element configuration.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 850mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Not Compliant |
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