N-Channel Power MOSFET, 500V Vds, 4.6A continuous drain current, and 850mΩ drain-source on-resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 40W. Operating temperature range spans from -55°C to 150°C, with a threshold voltage of 4V and fast switching times including a 14ns turn-on delay. Isolation voltage is rated at 2.5kV, and the component is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFI840GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
850mR
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.3nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI840GPBF Datasheet
Download the complete datasheet for Vishay IRFI840GPBF to view detailed technical specifications.
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