N-Channel Power MOSFET, 500V Vds, 4.6A continuous drain current, and 850mΩ drain-source on-resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 40W. Operating temperature range spans from -55°C to 150°C, with a threshold voltage of 4V and fast switching times including a 14ns turn-on delay. Isolation voltage is rated at 2.5kV, and the component is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay IRFI840GPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.3nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFI840GPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
