P-channel MOSFET, 100V drain-source voltage, 5.2A continuous drain current, and 0.6 ohm drain-source resistance. Features a 390pF input capacitance, 25ns fall time, and 9.6ns turn-on delay. Operates from -55°C to 175°C with a maximum power dissipation of 37W. Packaged in a TO-220AB through-hole mount, this RoHS compliant silicon power transistor offers a nominal gate-source voltage of -4V.
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Vishay IRFI9520GPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 390pF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.6ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
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