P-channel MOSFET, 100V drain-source voltage, 5.2A continuous drain current, and 0.6 ohm drain-source resistance. Features a 390pF input capacitance, 25ns fall time, and 9.6ns turn-on delay. Operates from -55°C to 175°C with a maximum power dissipation of 37W. Packaged in a TO-220AB through-hole mount, this RoHS compliant silicon power transistor offers a nominal gate-source voltage of -4V.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9520GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
-100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
390pF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
37W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI9520GPBF Datasheet
Download the complete datasheet for Vishay IRFI9520GPBF to view detailed technical specifications.
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