P-channel MOSFET, designed for power applications, features a 200V drain-source voltage and a continuous drain current of 3A. This silicon metal-oxide semiconductor FET offers a low 1.5-ohm drain-source resistance. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 30W. The component is housed in a TO-220AB package, suitable for through-hole mounting, and is RoHS compliant. Key switching characteristics include a turn-on delay of 8.8ns and a fall time of 19ns.
Vishay IRFI9620GPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
