P-channel power MOSFET featuring -200V drain-source voltage and 4.3A continuous drain current. Offers 800mΩ drain-source resistance and 35W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with a threshold voltage of -4V and 700pF input capacitance. Operates across a -55°C to 150°C temperature range and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Power35W
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Technical Specifications
Vishay IRFI9630GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
-200V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
700pF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
28ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI9630GPBF Datasheet
Download the complete datasheet for Vishay IRFI9630GPBF to view detailed technical specifications.
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