P-channel power MOSFET with a continuous drain current of 6.1A and a drain-source voltage of -200V. Features a low on-resistance of 500mΩ, enabling efficient power switching. This silicon, metal-oxide semiconductor FET is housed in a TO-220-3 package for through-hole mounting. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 40W. Turn-on delay is 14ns, turn-off delay is 39ns, and fall time is 38ns.
Vishay IRFI9640GPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 500mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | IRF/SIHF9640 |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
