N-Channel Power MOSFET featuring 500V drain-source voltage and 4.7A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 0.8 ohm drain-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 42W. Key switching characteristics include a 13ns turn-on delay and 10ns fall time.
Vishay IRFIB5N50LPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1nF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 800mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
