N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 6.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.52-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 60W. Key switching parameters include a 14ns turn-on delay and 28ns fall time.
PackageTO-220-3
Current Rating6.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIB7N50A technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.423nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 60W |
| Rds On Max | 520mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFIB7N50A Datasheet
Download the complete datasheet for Vishay IRFIB7N50A to view detailed technical specifications.
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