N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 6.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.52-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 60W. Key switching parameters include a 14ns turn-on delay and 28ns fall time.
PackageTO-220-3
Current Rating6.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIB7N50A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.6A
Current Rating
6.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
520mR
Drain to Source Voltage (Vdss)
500V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
1.423nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
60W
Rds On Max
520mR
RoHS Compliant
No
Turn-Off Delay Time
32ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFIB7N50A Datasheet
Download the complete datasheet for Vishay IRFIB7N50A to view detailed technical specifications.
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