Vishay
IRFIB7N50LPBF
Power Field-Effect Transistor, 6.8A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIB7N50LPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.8A
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
9.8mm
Input Capacitance
2.22nF
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
46W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
380mR
RoHS Compliant
No
Turn-Off Delay Time
47ns
Turn-On Delay Time
23ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFIB7N50LPBF Datasheet
Download the complete datasheet for Vishay IRFIB7N50LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.