Vishay
IRFIB7N50LPBF
Power Field-Effect Transistor, 6.8A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFIB7N50LPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 2.22nF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 380mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFIB7N50LPBF Datasheet
Download the complete datasheet for Vishay IRFIB7N50LPBF to view detailed technical specifications.
No datasheet is available for this part.