N-Channel Power MOSFET featuring 500V drain-source voltage and 6.7A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 0.35 ohm drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 45W. Key switching characteristics include a 17ns turn-on delay and 8.4ns fall time.
Vishay IRFIB8N50KPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8.4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 2.16nF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 350mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
