N-Channel Power Field-Effect Transistor designed for high voltage applications. Features a 900V Drain to Source Breakdown Voltage and a maximum continuous drain current of 1.9A. On-resistance is rated at 3.7 Ohms. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 35W.
PackageTO-220-3
Current Rating1.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBF30GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 3.7R |
| Dual Supply Voltage | 900V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.2nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 35W |
| Rds On Max | 3.7R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 900V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFIBF30GPBF Datasheet
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