N-Channel Power Field-Effect Transistor designed for high voltage applications. Features a 900V Drain to Source Breakdown Voltage and a maximum continuous drain current of 1.9A. On-resistance is rated at 3.7 Ohms. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 35W.
PackageTO-220-3
Current Rating1.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFIBF30GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.9A
Current Rating
1.9A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
3.7R
Dual Supply Voltage
900V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.2nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
35W
Rds On Max
3.7R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
90ns
Turn-On Delay Time
14ns
DC Rated Voltage
900V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFIBF30GPBF Datasheet
Download the complete datasheet for Vishay IRFIBF30GPBF to view detailed technical specifications.
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