N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 60V Drain-to-Source Breakdown Voltage (Vdss) and a continuous Drain Current (ID) of 2.7A. Offers a low Drain-Source On-Resistance (Rds On) of 200mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOT-223 surface-mount case.
Sign in to ask questions about the Vishay IRFL014PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay IRFL014PBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFL014PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
