N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 60V Drain-to-Source Breakdown Voltage (Vdss) and a continuous Drain Current (ID) of 2.7A. Offers a low Drain-Source On-Resistance (Rds On) of 200mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOT-223 surface-mount case.
PackageSOT-223
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFL014PBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.008826oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFL014PBF Datasheet
Download the complete datasheet for Vishay IRFL014PBF to view detailed technical specifications.
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