N-channel JFET with 100V drain-source voltage and 1.5A continuous drain current. Features a low 540mΩ drain-source on-resistance and 2W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a SOT-223 surface-mount format, this silicon metal-oxide semiconductor FET is RoHS compliant.
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Vishay IRFL110TRPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Current | 15A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Voltage | 100V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
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