N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 200V Drain-to-Source Voltage (Vdss) and 960mA Continuous Drain Current (ID). Offers a low Drain-to-Source On Resistance (Rds On) of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOT-223 surface-mount case.
Vishay IRFL210PBF technical specifications.
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