N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 200V Drain-to-Source Voltage (Vdss) and 960mA Continuous Drain Current (ID). Offers a low Drain-to-Source On Resistance (Rds On) of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOT-223 surface-mount case.
PackageSOT-223
Voltage200V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFL210PBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
960mA
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
1.5R
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
1.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
Voltage
200V
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFL210PBF Datasheet
Download the complete datasheet for Vishay IRFL210PBF to view detailed technical specifications.
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