N-channel Silicon Metal-oxide Semiconductor FET for surface mounting in a SOT-223 package. Features a continuous drain current of 790mA, a drain-source voltage of 250V, and a maximum drain-source on-resistance of 2 Ohms. Operates with a gate-source voltage up to 20V, exhibiting turn-on delay of 7ns and fall time of 7ns. Maximum power dissipation is 2W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay IRFL214TRPBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
790mA
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
2R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFL214TRPBF Datasheet
Download the complete datasheet for Vishay IRFL214TRPBF to view detailed technical specifications.
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