Vishay
IRFL9014
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay IRFL9014 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
60V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
270pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Package Quantity
80
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Threshold Voltage
-2V
Turn-Off Delay Time
9.6ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFL9014 Datasheet
Download the complete datasheet for Vishay IRFL9014 to view detailed technical specifications.
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