P-channel MOSFET, 60V drain-source voltage, 1.8A continuous drain current, and 0.5-ohm drain-to-source resistance. Features include a 20V gate-to-source voltage, 3.1W maximum power dissipation, and a 150°C maximum operating temperature. This single-element silicon Metal-Oxide-Semiconductor FET is surface-mount packaged in SOT-223, with dimensions of 6.7mm length, 3.7mm width, and 1.8mm height. It offers a turn-on delay of 11ns and a fall time of 31ns, with input capacitance at 270pF.
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Vishay IRFL9014TR technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.8A |
| Current Rating | -1.8A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 270pF |
| Lead Free | Contains Lead |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 500mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -60V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Not Compliant |
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