IRFL9014TR

P-channel MOSFET, 60V drain-source voltage, 1.8A continuous drain current, and 0.5-ohm drain-to-source resistance. Features include a 20V gate-to-source voltage, 3.1W maximum power dissipation, and a 150°C maximum operating temperature. This single-element silicon Metal-Oxide-Semiconductor FET is surface-mount packaged in SOT-223, with dimensions of 6.7mm length, 3.7mm width, and 1.8mm height. It offers a turn-on delay of 11ns and a fall time of 31ns, with input capacitance at 270pF.