N-Channel Power MOSFET, 60V Vdss, 57A continuous drain current, and 28mΩ Rds On. Features a 1-element silicon metal-oxide semiconductor FET construction with a TO-247-3 package for through-hole mounting. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 180W. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 88ns.
Vishay IRFP044PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 28mR |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.5nF |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 19ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
