N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 70A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 18mΩ drain-source on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 175°C and includes a lead-free package. Key switching characteristics include an 8.1ns turn-on delay and 210ns turn-off delay.
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Vishay IRFP048PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 70A |
| Current Rating | 70A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| DC Rated Voltage | 60V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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