N-channel power MOSFET featuring 500V drain-source voltage and 16A continuous drain current. Offers low on-resistance of 320mΩ (max) and 280mΩ (max) at a 10V gate-source voltage. Designed for through-hole mounting in a TO-247-3 package, this silicon metal-oxide semiconductor FET boasts a maximum power dissipation of 220W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and 28ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP17N50LPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 2.76nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 21ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP17N50LPBF Datasheet
Download the complete datasheet for Vishay IRFP17N50LPBF to view detailed technical specifications.
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