N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 230mΩ drain-source on-resistance and 277W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, it operates within a -55°C to 150°C temperature range. Key electrical characteristics include 3.45nF input capacitance and a 4V threshold voltage.
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Vishay IRFP22N50APBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230mR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 3.45nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 277W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 277W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 26ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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