N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 230mΩ drain-source on-resistance and 277W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, it operates within a -55°C to 150°C temperature range. Key electrical characteristics include 3.45nF input capacitance and a 4V threshold voltage.
PackageTO-247AC
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP22N50APBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
22A
Current Rating
22A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
230mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
230mR
Fall Time
47ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
3.45nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
277W
Mount
Through Hole
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
277W
Radiation Hardening
No
Rds On Max
230mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
47ns
Turn-On Delay Time
26ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP22N50APBF Datasheet
Download the complete datasheet for Vishay IRFP22N50APBF to view detailed technical specifications.
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