N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 23A Continuous Drain Current (ID). Features 235mΩ maximum Drain-Source On-Resistance (Rds On) and 370W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. This silicon Metal-oxide Semiconductor FET is housed in a TO-247 package with through-hole mounting. Includes 26ns turn-on delay, 53ns turn-off delay, and 45ns fall time.
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Vishay IRFP23N50L technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 235mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 3.6nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 235mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 26ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not Compliant |
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