N-Channel Power MOSFET, TO-247-3 package, featuring 250V drain-source breakdown voltage and 15A continuous drain current. Offers a low 280mΩ maximum drain-source on-resistance at 4V gate-source voltage. This silicon, metal-oxide semiconductor FET boasts a 150W maximum power dissipation and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 24ns.
Vishay IRFP244PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 150W |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 250V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
