N-Channel Power MOSFET featuring 250V drain-to-source breakdown voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.14ohm drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 15ns turn-on delay and 50ns fall time.
PackageTO-247-3
Current Rating23A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP254 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
23A
Current Rating
23A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
250V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.7nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
140mR
RoHS Compliant
No
Turn-Off Delay Time
74ns
Turn-On Delay Time
15ns
DC Rated Voltage
250V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFP254 Datasheet
Download the complete datasheet for Vishay IRFP254 to view detailed technical specifications.
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