N-Channel Power MOSFET featuring 250V drain-to-source breakdown voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.14ohm drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 15ns turn-on delay and 50ns fall time.
Sign in to ask questions about the Vishay IRFP254 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay IRFP254 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.7nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 140mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 250V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFP254 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
