N-Channel Power MOSFET, featuring a 250V Drain-Source Breakdown Voltage and 23A Continuous Drain Current. This silicon, metal-oxide semiconductor FET offers a low 140mΩ Drain-Source On Resistance and 190W Max Power Dissipation. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 15ns Turn-On Delay Time and 50ns Fall Time.
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Vishay IRFP254PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 15ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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