N-Channel Power MOSFET featuring 250V drain-source voltage and 38A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 75mΩ drain-source resistance. Designed for through-hole mounting in a TO-247-3 package, it supports a maximum power dissipation of 280W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns turn-on delay and 92ns fall time.
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Vishay IRFP264 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 92ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 22ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
