N-Channel Power MOSFET featuring 250V Drain-Source Voltage (Vdss) and 38A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 75mΩ Drain-Source On-Resistance (Rds On Max) and a maximum power dissipation of 280W. Designed for through-hole mounting in a TO-247AC package, it operates from -55°C to 150°C and includes a 4V nominal gate-source voltage (Vgs). Key switching characteristics include a 22ns turn-on delay and 92ns fall time.
PackageTO-247AC
Current Rating38A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFP264PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 38A |
| Current Rating | 38A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 75mR |
| Fall Time | 92ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 250V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP264PBF Datasheet
Download the complete datasheet for Vishay IRFP264PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
