N-Channel Power MOSFET featuring 500V drain-source voltage and 31A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 180mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 460W. Key switching characteristics include a 28ns turn-on delay and 53ns fall time.
PackageTO-247-3
Current Rating31A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP31N50L technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
31A
Current Rating
31A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
500V
Fall Time
53ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
5nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
180mR
RoHS Compliant
No
Turn-Off Delay Time
54ns
Turn-On Delay Time
28ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP31N50L Datasheet
Download the complete datasheet for Vishay IRFP31N50L to view detailed technical specifications.
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