N-Channel Power MOSFET featuring 500V drain-source voltage and 31A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 180mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 460W. Key switching characteristics include a 28ns turn-on delay and 53ns fall time.
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Vishay IRFP31N50L technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 5nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
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