N-Channel Power MOSFET, 500V Vdss, 32A continuous drain current, and 160mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package with 3 pins, suitable for through-hole mounting. Key electrical characteristics include a 5.28nF input capacitance, 28ns turn-on delay, and 48ns turn-off delay. Maximum power dissipation is rated at 460W, with an operating temperature range of -55°C to 150°C.
Sign in to ask questions about the Vishay IRFP32N50K datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay IRFP32N50K technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 5.28nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRFP32N50K to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
