N-Channel Power MOSFET, 500V Vdss, 32A continuous drain current, and 160mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package with 3 pins, suitable for through-hole mounting. Key electrical characteristics include a 5.28nF input capacitance, 28ns turn-on delay, and 48ns turn-off delay. Maximum power dissipation is rated at 460W, with an operating temperature range of -55°C to 150°C.
PackageTO-247-3
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP32N50K technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
32A
Current Rating
32A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
500V
Fall Time
54ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
5.28nF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
No
Turn-Off Delay Time
48ns
Turn-On Delay Time
28ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFP32N50K Datasheet
Download the complete datasheet for Vishay IRFP32N50K to view detailed technical specifications.
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