N-Channel Power MOSFET, 500V Vdss, 32A continuous drain current, and 160mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-247 package with 3 pins, suitable for through-hole mounting. Key electrical characteristics include a 5.28nF input capacitance, 28ns turn-on delay, and 48ns turn-off delay. Maximum power dissipation is rated at 460W, with an operating temperature range of -55°C to 150°C.
PackageTO-247-3
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP32N50K technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 5.28nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFP32N50K Datasheet
Download the complete datasheet for Vishay IRFP32N50K to view detailed technical specifications.
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