N-channel power MOSFET, 500V drain-source voltage, 32A continuous drain current, and 160mΩ maximum drain-source on-resistance. Features a 460W maximum power dissipation and operates within a -55°C to 150°C temperature range. This silicon metal-oxide semiconductor FET is housed in a TO-247AC package with through-hole mounting. Includes 28ns turn-on delay and 48ns turn-off delay times.
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Vishay IRFP32N50KPBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 135mR |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 5.28nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
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