N-channel power MOSFET, 500V drain-source voltage, 32A continuous drain current, and 160mΩ maximum drain-source on-resistance. Features a 460W maximum power dissipation and operates within a -55°C to 150°C temperature range. This silicon metal-oxide semiconductor FET is housed in a TO-247AC package with through-hole mounting. Includes 28ns turn-on delay and 48ns turn-off delay times.
PackageTO-247AC
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP32N50KPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
32A
Current Rating
32A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
135mR
Fall Time
54ns
Gate to Source Voltage (Vgs)
30V
Height
20.7mm
Input Capacitance
5.28nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460W
Mount
Through Hole
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
460W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
5V
Turn-Off Delay Time
48ns
Turn-On Delay Time
28ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP32N50KPBF Datasheet
Download the complete datasheet for Vishay IRFP32N50KPBF to view detailed technical specifications.
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