N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 300mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AC package, it boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and 47ns fall time.
Vishay IRFP350PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 16A |
| Current | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 16ns |
| Voltage | 400V |
| DC Rated Voltage | 400V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
