N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 23A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 200mΩ drain-source on-resistance and 280W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, it operates from -55°C to 150°C with a 4V threshold voltage. Key switching characteristics include an 18ns turn-on delay and 67ns fall time.
PackageTO-247AC
Current Rating23A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP360PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
23A
Current Rating
23A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
200mR
Fall Time
67ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
4.5nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
280W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
100ns
Turn-On Delay Time
18ns
DC Rated Voltage
400V
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFP360PBF Datasheet
Download the complete datasheet for Vishay IRFP360PBF to view detailed technical specifications.
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