N-Channel Power MOSFET, 500V Drain-Source Voltage, 8.8A Continuous Drain Current, and 0.85ohm Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-247-3 package for through-hole mounting. Key specifications include a 150W maximum power dissipation, 1.3nF input capacitance, and operating temperatures from -55°C to 150°C. The device is RoHS compliant.
PackageTO-247-3
Current Rating8.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFP440PBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 8.8A |
| Current Rating | 8.8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Dual Supply Voltage | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Lead Pitch | 5.45mm |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFP440PBF Datasheet
Download the complete datasheet for Vishay IRFP440PBF to view detailed technical specifications.
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