N-Channel Power MOSFET, 500V Vds, 11A Continuous Drain Current, and 600mΩ Max Rds(on). This silicon metal-oxide semiconductor FET features a TO-247-3 package for through-hole mounting. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 180W. Key switching parameters include an 18ns turn-on delay and a 32ns fall time. The component is RoHS compliant.
Vishay IRFP448PBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 600MR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
