N-Channel Power MOSFET featuring 500V drain-to-source voltage and 16A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 400mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 14ns turn-on delay and 30ns fall time.
Vishay IRFP450LC technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 16A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.2nF |
| Lead Free | Contains Lead |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
