N-Channel Power MOSFET, 500V Vdss, 14A continuous drain current, and 400mΩ drain-source on-resistance. Features a 14ns turn-on delay and 30ns fall time, with a maximum power dissipation of 190W. This silicon metal-oxide semiconductor FET is housed in a TO-247-3 through-hole package and operates from -55°C to 150°C. ROHS compliant.
Vishay IRFP450LCPBF technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.7mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
| RoHS | Compliant |
No datasheet is available for this part.
